DMT6015LSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 9.2A 8SO
$0.78
Available to order
Reference Price (USD)
2,500+
$0.32310
5,000+
$0.30330
12,500+
$0.29340
25,000+
$0.28800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT6015LSS-13 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMT6015LSS-13 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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