DMT64M2LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 20.7A/100A PWRDI
$0.45
Available to order
Reference Price (USD)
1+
$0.44598
500+
$0.4415202
1000+
$0.4370604
1500+
$0.4326006
2000+
$0.4281408
2500+
$0.423681
Exquisite packaging
Discount
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The DMT64M2LPSW-13 single MOSFET from Diodes Incorporated is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the DMT64M2LPSW-13 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
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