DMT69M5LH3
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO251 TUBE
$0.67
Available to order
Reference Price (USD)
1+
$0.67173
500+
$0.6650127
1000+
$0.6582954
1500+
$0.6515781
2000+
$0.6448608
2500+
$0.6381435
Exquisite packaging
Discount
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Enhance your electronic projects with the DMT69M5LH3 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMT69M5LH3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Stub Leads, IPak
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