DMTH6004SPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 100A PWRDI5060
$1.10
Available to order
Reference Price (USD)
2,500+
$1.17950
Exquisite packaging
Discount
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Discover the DMTH6004SPSQ-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMTH6004SPSQ-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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