DMTH8008SPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.54
Available to order
Reference Price (USD)
1+
$0.54454
500+
$0.5390946
1000+
$0.5336492
1500+
$0.5282038
2000+
$0.5227584
2500+
$0.517313
Exquisite packaging
Discount
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The DMTH8008SPSQ-13 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMTH8008SPSQ-13 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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