DRA2144V0L
Panasonic Electronic Components
Panasonic Electronic Components
TRANS PREBIAS PNP 200MW MINI3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.07203
6,000+
$0.06483
15,000+
$0.05762
30,000+
$0.05402
75,000+
$0.04802
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, DRA2144V0L offers unmatched convenience. Panasonic Electronic Components's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: MINI3-G3-B
Related Products
Toshiba Semiconductor and Storage
RN1105MFV,L3F
Infineon Technologies
BCR198WE6327BTSA1
Panasonic Electronic Components
DRC2115T0L
Panasonic Electronic Components
UNR9110J0L
Panasonic Electronic Components
UNR32A5G0L
Rohm Semiconductor
DTA144VKAT146
Diodes Incorporated
DDTA113TKA-7-F
Infineon Technologies
BCR133WE6327HTSA1
Infineon Technologies
BCR 116L3 E6327
Infineon Technologies