DSS4160T-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 1A SOT23-3
$0.45
Available to order
Reference Price (USD)
3,000+
$0.10973
6,000+
$0.10421
15,000+
$0.09594
30,000+
$0.09043
75,000+
$0.08400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the DSS4160T-7 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the DSS4160T-7 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 725 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
onsemi
MMBTA42LT1G
NTE Electronics, Inc
NTE36MP
Diotec Semiconductor
BFS20
Central Semiconductor Corp
CZT3904 TR PBFREE
Diodes Incorporated
DXT2010P5-13
onsemi
2SA2126-E
Nexperia USA Inc.
BC807-16LZ
Rohm Semiconductor
2SAR533PHZGT100
Infineon Technologies
BCX69-25E6327HTSA1
Microchip Technology