DSS8110Y-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN 100V 1A SOT363
$0.43
Available to order
Reference Price (USD)
3,000+
$0.08625
6,000+
$0.07838
15,000+
$0.07050
30,000+
$0.06656
75,000+
$0.06000
Exquisite packaging
Discount
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The DSS8110Y-7 by Diodes Incorporated is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the DSS8110Y-7 ensures efficient and stable operation. Backed by Diodes Incorporated's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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