DTC023EEBTL
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 50V EMT3F
$0.20
Available to order
Reference Price (USD)
3,000+
$0.02805
6,000+
$0.02530
15,000+
$0.02200
30,000+
$0.01980
75,000+
$0.01760
150,000+
$0.01540
Exquisite packaging
Discount
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Engineers choose DTC023EEBTL for its exceptional linearity in amplification circuits. Rohm Semiconductor's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: EMT3F (SOT-416FL)
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