DTC115EUBTL
Rohm Semiconductor
Rohm Semiconductor
NPN, SOT-323FL, R1=R2 POTENTIAL
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DTC115EUBTL from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Rohm Semiconductor's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
Related Products
Panasonic Electronic Components
UNR9115J0L
Diodes Incorporated
DDTA144VE-7-F
Panasonic Electronic Components
UNR221700L
NXP USA Inc.
PDTA144EMB,315
Nexperia USA Inc.
PDTA123JQC-QZ
Rohm Semiconductor
DTC023EMT2L
Nexperia USA Inc.
PBRN123YT,215
Diodes Incorporated
DDTA124GE-7-F
Nexperia USA Inc.
PDTC143EU,115
Toshiba Semiconductor and Storage