DTC143EUBHZGTL
Rohm Semiconductor
Rohm Semiconductor
NPN DIGITAL TRANSISTOR (WITH BUI
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Rohm Semiconductor's DTC143EUBHZGTL, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Rohm Semiconductor delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
Related Products
Infineon Technologies
BCR116E6433HTMA1
Toshiba Semiconductor and Storage
RN2409,LF
onsemi
DTA115EET1G
Rohm Semiconductor
DTC143XUAT106
Nexperia USA Inc.
NHDTA144ETVL
Nexperia USA Inc.
PBRN123ET,215
Diodes Incorporated
DDTA143TCA-7-F
Toshiba Semiconductor and Storage
RN2102,LXHF(CT
Toshiba Semiconductor and Storage
RN2301,LXHF
onsemi