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DTC363EUT106

Rohm Semiconductor
DTC363EUT106 Preview
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3
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Specifications

  • Product Status: Obsolete
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Resistor - Base (R1): 6.8 kOhms
  • Resistor - Emitter Base (R2): 6.8 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3

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