DTD713ZMT2L
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 150MW VMT3
$0.39
Available to order
Reference Price (USD)
8,000+
$0.09180
16,000+
$0.08370
24,000+
$0.07830
56,000+
$0.07560
Exquisite packaging
Discount
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Engineers choose DTD713ZMT2L for its exceptional linearity in amplification circuits. Rohm Semiconductor's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 260 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
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