DXT5551P5Q-13
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR PDI5
$0.21
Available to order
Reference Price (USD)
1+
$0.20534
500+
$0.2032866
1000+
$0.2012332
1500+
$0.1991798
2000+
$0.1971264
2500+
$0.195073
Exquisite packaging
Discount
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Enhance your circuit designs with the DXT5551P5Q-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The DXT5551P5Q-13 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -