DXTN07100BFG-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN 100V 2A POWERDI3
$0.57
Available to order
Reference Price (USD)
2,000+
$0.22533
6,000+
$0.21239
10,000+
$0.19944
50,000+
$0.19728
Exquisite packaging
Discount
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Upgrade your electronic designs with the DXTN07100BFG-7 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the DXTN07100BFG-7 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
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