DXTP03060BFG-7
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR POWERDI33
$0.24
Available to order
Reference Price (USD)
1+
$0.24024
500+
$0.2378376
1000+
$0.2354352
1500+
$0.2330328
2000+
$0.2306304
2500+
$0.228228
Exquisite packaging
Discount
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Upgrade your electronic designs with the DXTP03060BFG-7 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the DXTP03060BFG-7 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5.5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 50A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 1.07 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
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