DXTP07025BFGQ-7
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR POWERDI3
$0.25
Available to order
Reference Price (USD)
1+
$0.25050
500+
$0.247995
1000+
$0.24549
1500+
$0.242985
2000+
$0.24048
2500+
$0.237975
Exquisite packaging
Discount
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Upgrade your electronic designs with the DXTP07025BFGQ-7 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the DXTP07025BFGQ-7 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
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