DXTP07100BFG-7
Diodes Incorporated
Diodes Incorporated
TRANS PNP 100V 2A POWERDI3
$0.57
Available to order
Reference Price (USD)
2,000+
$0.22533
6,000+
$0.21239
10,000+
$0.19944
50,000+
$0.19728
Exquisite packaging
Discount
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The DXTP07100BFG-7 Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the DXTP07100BFG-7 provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
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