DXTP3C100PSQ-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 100V 3A POWERDI5060-8
$0.23
Available to order
Reference Price (USD)
2,500+
$0.25585
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DXTP3C100PSQ-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the DXTP3C100PSQ-13 is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
- Power - Max: 5 W
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type Q)
Related Products
Renesas Electronics America Inc
AD2A3M-T
Microchip Technology
JAN2N5684
Microchip Technology
JAN2N3019A
Microchip Technology
JANTX2N5680
Central Semiconductor Corp
2N3055 PBFREE
Microchip Technology
2N7375
Fairchild Semiconductor
KSH31TF
Microchip Technology
2N4301
Microchip Technology
JAN2N3902
Microchip Technology