EC3H02BA-TL-H
onsemi
onsemi
RF TRANS NPN 10V 7GHZ 3-ECSP1006
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Discover the EC3H02BA-TL-H, a cutting-edge RF Bipolar Junction Transistor (BJT) from onsemi, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The EC3H02BA-TL-H features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose onsemi for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
- Gain: 8.5dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: ECSP1006-3
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