EC4H09C-TL-H
onsemi
onsemi
RF TRANS NPN 3.5V 26GHZ ECSP1008
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
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Introducing the EC4H09C-TL-H, a high-performance RF Bipolar Junction Transistor (BJT) from onsemi, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The EC4H09C-TL-H features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on onsemi for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 26GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
- Gain: 15dB
- Power - Max: 120mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-UFDFN
- Supplier Device Package: 4-ECSP1008
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