EDB4432BBBJ-1DAAT-F-R TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 134FBGA
$0.00
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Reference Price (USD)
1,000+
$10.60313
Exquisite packaging
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The EDB4432BBBJ-1DAAT-F-R TR by Micron Technology Inc. is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the EDB4432BBBJ-1DAAT-F-R TR are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The EDB4432BBBJ-1DAAT-F-R TR stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The EDB4432BBBJ-1DAAT-F-R TR finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the EDB4432BBBJ-1DAAT-F-R TR a preferred Memory IC for diverse uses.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 4Gb (128M x 32)
- Memory Interface: Parallel
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-WFBGA
- Supplier Device Package: 134-FBGA (10x11.5)
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