EGF1AHE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO214BA
$0.00
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Reference Price (USD)
6,000+
$0.20300
Exquisite packaging
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Maximize your device's efficiency with the EGF1AHE3_A/H single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The EGF1AHE3_A/H is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Vishay General Semiconductor - Diodes Division's EGF1AHE3_A/H is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
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