EGF1D-2HE3_B/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214BA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the EGF1D-2HE3_B/H single rectifier diode by Vishay General Semiconductor - Diodes Division. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The EGF1D-2HE3_B/H is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Vishay General Semiconductor - Diodes Division's EGF1D-2HE3_B/H for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Central Semiconductor Corp
CTLSH1-40M322S BK
WeEn Semiconductors
NXPSC04650DJ
Comchip Technology
CDBER42-HF
Taiwan Semiconductor Corporation
RS3B M6
Vishay General Semiconductor - Diodes Division
GP10G-132M3/54
Central Semiconductor Corp
CPD200-CEN1384B-CT
Renesas Electronics America Inc
HRU0203ATRF-E
Powerex Inc.
R9S01830XX
Semtech Corporation
2T2KA
Microchip Technology