Shopping cart

Subtotal: $0.00

EGL41AHE3_A/I

Vishay General Semiconductor - Diodes Division
EGL41AHE3_A/I Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
10,000+
$0.12325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Microchip Technology

1N6884UTK4AS

Semtech Corporation

SCF10000

Comchip Technology

RS2KWF-HF

Semtech Corporation

SET121203

Microchip Technology

1N2496

Vishay General Semiconductor - Diodes Division

BYW74-L36

Microchip Technology

UFR3280R

Microchip Technology

UTR2310

Microchip Technology

UFR3020R

Top