EGL41BHE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
9,000+
$0.13175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the EGL41BHE3_A/H single rectifier diode by Vishay General Semiconductor - Diodes Division. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The EGL41BHE3_A/H is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Vishay General Semiconductor - Diodes Division's EGL41BHE3_A/H for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Comchip Technology
A1N5404G-G
GeneSiC Semiconductor
GKR240/12
Semtech Corporation
ISOPAC1211
Microchip Technology
UES1106SM-1
Microchip Technology
1N6544/TR
Comchip Technology
US8GC-HF
Microchip Technology
S20140
Microchip Technology
1N3294
Powerex Inc.
R7S00608XX
Powerex Inc.