Shopping cart

Subtotal: $0.00

EGL41GHE3_A/H

Vishay General Semiconductor - Diodes Division
EGL41GHE3_A/H Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
9,000+
$0.13175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 14pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Diodes Incorporated

SDM02U30APS-7B

Microchip Technology

MBR4045PTE3/TU

Microchip Technology

JANTX1N3645/TR

Microchip Technology

SBR60100R

Microchip Technology

JANS1N5804URS

Vishay General Semiconductor - Diodes Division

AS1FK-M3/H

Micro Commercial Co

B5817WHE3-TP

Microchip Technology

JANS1N6642US/TR

Microchip Technology

MSASC150H45LV/TR

Top