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EPC2007C

EPC
EPC2007C Preview
EPC
GANFET N-CH 100V 6A DIE OUTLINE
$2.24
Available to order
Reference Price (USD)
2,500+
$0.92400
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
  • Vgs (Max): +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die Outline (5-Solder Bar)
  • Package / Case: Die

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