EPC2015
EPC
EPC
GANFET N-CH 40V 33A DIE OUTLINE
$0.00
Available to order
Reference Price (USD)
500+
$3.92590
Exquisite packaging
Discount
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The EPC2015 from EPC sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to EPC's EPC2015 for their critical applications.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
- Vgs (Max): +6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (11-Solder Bar)
- Package / Case: Die
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