EPC2016
EPC
EPC
GANFET N-CH 100V 11A DIE
$0.00
Available to order
Reference Price (USD)
2,500+
$1.46300
Exquisite packaging
Discount
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Optimize your power electronics with the EPC2016 single MOSFET from EPC. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the EPC2016 combines cutting-edge technology with EPC's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
- Vgs (Max): +6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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