EPC2025
EPC
EPC
GANFET N-CH 300V 4A DIE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the EPC2025 from EPC, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the EPC2025 ensures reliable performance in demanding environments. Upgrade your circuit designs with EPC's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 194 pF @ 240 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
NXP USA Inc.
PSMN2R9-25YLC/GFX
Microchip Technology
CC1202
Renesas Electronics America Inc
UPA2766T1A-E1-AY
Comchip Technology
CMS03P06T6-HF
Infineon Technologies
SIPC26N80C3
onsemi
NTHL120N60S5Z
Microsemi Corporation
JANTXV2N6798
Renesas Electronics America Inc
2SK3386(0)-Z-E1-AZ
Infineon Technologies
IRF7607TRPBFTR
IXYS