EPC2030ENGRT
EPC
EPC
GANFET NCH 40V 31A DIE
$0.00
Available to order
Reference Price (USD)
500+
$4.10020
1,000+
$3.45800
Exquisite packaging
Discount
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The EPC2030ENGRT from EPC sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to EPC's EPC2030ENGRT for their critical applications.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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