EPC2055
EPC
EPC
GANFET N-CH 40V 29A DIE
$2.66
Available to order
Reference Price (USD)
1+
$2.66000
500+
$2.6334
1000+
$2.6068
1500+
$2.5802
2000+
$2.5536
2500+
$2.527
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the EPC2055 single MOSFET from EPC. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust EPC's EPC2055 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1111 pF @ 20 V
- FET Feature: Standard
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Diodes Incorporated
DMP2018LFK-7
Infineon Technologies
IPD42DP15LMATMA1
onsemi
FQP8P10
onsemi
NTMFS5C628NLT3G
Infineon Technologies
IPA90R800C3XKSA2
Toshiba Semiconductor and Storage
TK16G60W,RVQ
Nexperia USA Inc.
BUK9M52-40EX
Toshiba Semiconductor and Storage
TK20E60W5,S1VX
Infineon Technologies
AUIRFP2907
Micro Commercial Co