EPC2102ENGRT
EPC
EPC
GANFET 2 N-CHANNEL 60V 23A DIE
$0.00
Available to order
Reference Price (USD)
500+
$4.74300
1,000+
$4.28400
Exquisite packaging
Discount
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The EPC2102ENGRT by EPC is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the EPC2102ENGRT provides reliable operation under stringent conditions. EPC's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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