EPC2103ENGRT
EPC
EPC
GANFET TRANS SYM HALF BRDG 80V
$0.00
Available to order
Reference Price (USD)
500+
$4.80500
1,000+
$4.34000
Exquisite packaging
Discount
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Choose the EPC2103ENGRT from EPC for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the EPC2103ENGRT stands out for its reliability and efficiency. EPC's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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