EPC2110
EPC
EPC
GANFET 2NCH 120V 3.4A DIE
$2.37
Available to order
Reference Price (USD)
2,500+
$1.02200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2110 by EPC is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the EPC2110 provides reliable operation under stringent conditions. EPC's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Die
- Supplier Device Package: Die
Related Products
onsemi
NTMFD5C650NLT1G
Wolfspeed, Inc.
CCB021M12FM3
onsemi
NTZD3152PT1H
Alpha & Omega Semiconductor Inc.
AON5820
Vishay Siliconix
SI7904BDN-T1-GE3
onsemi
FDS4897C
Harris Corporation
IRFR420U
Alpha & Omega Semiconductor Inc.
AONY36354
Panjit International Inc.
PJX8838_R1_00001
Rohm Semiconductor