EPC2203
EPC
EPC
GANFET N-CH 80V 1.7A DIE
$0.91
Available to order
Reference Price (USD)
2,500+
$0.35000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2203 by EPC is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the EPC2203 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
- Vgs (Max): +5.75V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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