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EPC8002

EPC
EPC8002 Preview
EPC
GANFET N-CH 65V 2A DIE
$3.26
Available to order
Reference Price (USD)
2,500+
$1.42800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 65 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 530mOhm @ 500mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 32.5 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die

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