Shopping cart

Subtotal: $0.00

ES1ALHM2G

Taiwan Semiconductor Corporation
ES1ALHM2G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Diodes Incorporated

SK15-13-F

Taiwan Semiconductor Corporation

SS34LHRQG

Taiwan Semiconductor Corporation

SR809 R0G

Taiwan Semiconductor Corporation

RS3M V7G

Taiwan Semiconductor Corporation

SRT13HA0G

Vishay General Semiconductor - Diodes Division

30CPF12

Diodes Incorporated

B350B-13

Vishay General Semiconductor - Diodes Division

SS10P3HM3/86A

Taiwan Semiconductor Corporation

MBR10150 C0G

Top