Shopping cart

Subtotal: $0.00

ES1BHE3/61T

Vishay General Semiconductor - Diodes Division
ES1BHE3/61T Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

MBRB735HE3_A/P

Panasonic Electronic Components

MA22D3900L

Taiwan Semiconductor Corporation

SF2L4GHB0G

Taiwan Semiconductor Corporation

RSFBLHMQG

WeEn Semiconductors

BYC30W-1200PQ

Vishay General Semiconductor - Diodes Division

SL23HE3/5BT

Infineon Technologies

D970N02TXPSA1

Taiwan Semiconductor Corporation

S3DHR7G

Microchip Technology

JANTX1N6858-1

Vishay General Semiconductor - Diodes Division

1N4933GPHE3/54

Top