ES1DV R3G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
$0.00
Available to order
Reference Price (USD)
3,600+
$0.09945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ES1DV R3G by Taiwan Semiconductor Corporation is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The ES1DV R3G is also used in smart home devices and wearable technology, ensuring seamless operation. Taiwan Semiconductor Corporation's expertise in semiconductor technology guarantees that the ES1DV R3G delivers top-notch performance in any application.
Specifications
- Product Status: Discontinued at Digi-Key
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
MBRB1050-E3/45
Diodes Incorporated
1N5819-B
Taiwan Semiconductor Corporation
RSFBLHM2G
Taiwan Semiconductor Corporation
FR203G A0G
Comchip Technology
CFRM101-HF
Taiwan Semiconductor Corporation
SF2001GHC0G
Diodes Incorporated
SD103BWS-7-F-79
Vishay General Semiconductor - Diodes Division
MSS2P3HM3/89A
onsemi
MBRS410ET3
Taiwan Semiconductor Corporation