Shopping cart

Subtotal: $0.00

ES1HL R3G

Taiwan Semiconductor Corporation
ES1HL R3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A SUB SMA
$0.61
Available to order
Reference Price (USD)
1+
$0.61000
500+
$0.6039
1000+
$0.5978
1500+
$0.5917
2000+
$0.5856
2500+
$0.5795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 500 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Comchip Technology

FR205GA-G

STMicroelectronics

STPS2H100U

Rohm Semiconductor

RB162LAM-60TFTR

Rohm Semiconductor

RB511SM-30T2R

Panjit International Inc.

PG154_R2_00001

Solid State Inc.

300U60A

Vishay General Semiconductor - Diodes Division

VS-15EVU06-M3/I

NTE Electronics, Inc

1N5392

Vishay General Semiconductor - Diodes Division

BYT56A-TAP

Infineon Technologies

IDH06SG60CXKSA2

Top