Shopping cart

Subtotal: $0.00

ES1JLHRQG

Taiwan Semiconductor Corporation
ES1JLHRQG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
$0.00
Available to order
Reference Price (USD)
20,000+
$0.08838
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Micro Commercial Co

SF32G-AP

Vishay General Semiconductor - Diodes Division

UB8DT-E3/4W

Vishay General Semiconductor - Diodes Division

SS2H10HE3/5BT

Vishay General Semiconductor - Diodes Division

SS3P6-E3/84A

Panasonic Electronic Components

DB2U30900L

Vishay General Semiconductor - Diodes Division

20ETF10S

Micro Commercial Co

SD103C-TP

Vishay General Semiconductor - Diodes Division

VS-90SQ045

Vishay General Semiconductor - Diodes Division

VS-50SQ080TR

Microchip Technology

JANHCA1N5292

Top