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ES1JLW RVG

Taiwan Semiconductor Corporation
ES1JLW RVG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP
$0.15
Available to order
Reference Price (USD)
3,000+
$0.08520
6,000+
$0.07668
15,000+
$0.06816
30,000+
$0.06390
75,000+
$0.05964
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C

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