Shopping cart

Subtotal: $0.00

ES3DHE3/9AT

Vishay General Semiconductor - Diodes Division
ES3DHE3/9AT Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO214AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Taiwan Semiconductor Corporation

SR003 R0G

Vishay General Semiconductor - Diodes Division

GPP15A-E3/54

Rohm Semiconductor

RB520ZS-308EPT2R

Vishay General Semiconductor - Diodes Division

EGL34D/1

Toshiba Semiconductor and Storage

CRS04(TE85L)

Diodes Incorporated

SB130-B

Vishay General Semiconductor - Diodes Division

ES3B/7T

Taiwan Semiconductor Corporation

SK110BHR5G

Vishay General Semiconductor - Diodes Division

GP10K-M3/54

Top