ES6U2T2R
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 20V 1.5A 6WEMT
$0.00
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Reference Price (USD)
8,000+
$0.09300
Exquisite packaging
Discount
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Enhance your electronic projects with the ES6U2T2R single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's ES6U2T2R for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WEMT
- Package / Case: 6-SMD, Flat Leads
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