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ESH1B

Taiwan Semiconductor Corporation
ESH1B Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
$0.09
Available to order
Reference Price (USD)
1+
$0.09275
500+
$0.0918225
1000+
$0.090895
1500+
$0.0899675
2000+
$0.08904
2500+
$0.0881125
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C

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