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ESH1DM RSG

Taiwan Semiconductor Corporation
ESH1DM RSG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A MICRO SMA
$0.50
Available to order
Reference Price (USD)
3,000+
$0.10312
6,000+
$0.09809
15,000+
$0.09054
30,000+
$0.08551
75,000+
$0.08300
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 3pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Micro SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

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