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ESH1DMH

Taiwan Semiconductor Corporation
ESH1DMH Preview
Taiwan Semiconductor Corporation
25NS, 1A, 200V, ULTRA FAST RECOV
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 3pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Micro SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

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