ESH2BHE3/52T
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2A DO214AA
$0.00
Available to order
Reference Price (USD)
Call+
$Call
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ESH2BHE3/52T by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The ESH2BHE3/52T is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the ESH2BHE3/52T delivers top-notch performance in any application.
Specifications
- Product Status: Discontinued at Digi-Key
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
onsemi
NSR20406NXT5G
Vishay General Semiconductor - Diodes Division
RGP10G-E3/53
Taiwan Semiconductor Corporation
RS1AL MTG
Vishay General Semiconductor - Diodes Division
VS-MBRB1635TRRPBF
Central Semiconductor Corp
UF4001 TR
Diodes Incorporated
SB350-B
Diodes Incorporated
BAT54T-7
Taiwan Semiconductor Corporation
SS35HR7G
Diodes Incorporated
RS3J-13
Diodes Incorporated